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| e PTB 20175 55 Watts, 1.9-2.0 GHz Cellular Radio RF Power Transistor Description The 20175 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.9 to 2.0 GHz. It is rated at 55 watts minimum output power and may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 55 Watts, 1.9-2.0 GHz Class AB Characteristics 40% Collector Efficiency at 55 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 70 Output Power (Watts) 60 50 40 30 20 10 2 4 6 8 10 12 14 201 75 LOT COD E VCC = 26 V ICQ = 0.150 A f = 2 GHz Input Power (Watts) Package 20223 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25 C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70 C) Tstg RJC Symbol VCER VCES VEBO IC PD Value 55 55 4 8 233 1.33 -40 to +150 .75 Unit Vdc Vdc Vdc Adc W W/C C C/W 1 9/28/98 PTB 20175 Electrical Characteristics Characteristics Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions Ic = 60 mA, RB = 27 VBE = 0 V, IC = 60 mA IC = 0 V, IE = 25 mA VCE = 5 V, IC = 300 mA Symbol V(BR)CER V(BR)CES V(BR)EBO Hfe Min 55 55 4.0 -- Typ -- -- 5 50 Max -- -- -- -- Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristics Gain (VCC = 26 Vdc, Pout = 55 W, ICQ = 150 mA, f = 2.0 GHz) Collector Efficiency (VCC = 26 Vdc, Pout = 55 W, ICQ = 150 mA, f = 2.0 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 55 W(PEP), ICQ = 150 mA, f = 2.0 GHz--All Phase Angles at Frequency of Test) Symbol Gpe Min 7.0 Typ 7.6 Max -- Units dB C 37 47 -- % -- -- 5:1 -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 55 W, ICQ = 150 mA) Z Source Z Load Frequency GHz 1.90 1.95 2.00 R Z Source jX -2.0 -1.7 -1.4 R 2.30 2.25 2.20 Z Load jX -1.9 -2.2 -2.5 Z0 = 50 3.26 3.26 3.26 2 5 /19/98 e Typical Performance Gain vs. Frequency (as measured in a broadband circuit) 9.0 60 50 PTB 20175 Efficiency vs. Output Power VCC = 26 V 8.5 Gain (dB) ICQ = 0.150 A Pout = 15 W Efficiency (%) 40 30 20 10 0 8.0 VCC = 26 V ICQ = 0.150 A f = 2 GHz 20 25 30 35 40 45 50 55 60 65 7.5 7.0 1.90 1.93 1.95 1.98 2.00 Frequency (GHz) Output Power (Watts) Intermodulation Distortion vs. Power Output -20 VCC = 26 V -24 ICQ = 0.150 A f1 = 1.999 GHz F2 = 2.000 GHz IMD (dBc) -28 -32 -36 -40 0 10 20 30 40 50 60 Output Power (Watts-PEP) Test Circuit Artwork (1 inch ) 3 5/19/98 PTB 20175 e Schematic for f = 2 GHz Q1 l1 l2 l3 l4 l5 l6 l7 l8 l9 PTB 20175 .1 2 GHz .065 2 GHz .095 2 GHz .055 2 GHz .055 2 GHz .065 2 GHz .25 2 GHz NPN RF Transistor Microstrip 50 Microstrip 75 Microstrip 16 Microstrip 10.8 Microstrip 8.0 Microstrip 12.5 Microstrip 22 Microstrip 60 Microstrip 50 C1, C6 C2, C7 C3, C4, C8, C10 C5, C9 L1 L2 L3 R1 Board .1 F 10 F, 35 V 33 pF 0 - 4 pf 56 nh 6.8 nh 4 mm. 22 .031 G-200 Solid 1206 Chip SMT Tantalum ATC-100 Johanson Trimmer SMT Inductor SMT Inductor SMT Ferrite 1206 Chip Copper Bottom Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) 1996 Ericsson Inc. EUS/KR 1301-PTB 20175 Uen Rev. C 09-28-98 4 |
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